Features:
FRAM is non-volatile and can easily be read/written 10 trillion times.

It's similar to Dynamic random-access memory (DRAM), only with a ferroelectric layer instead of a dielectric layer.

It is particularly suitable for use with low power data loggers and for buffering data in the absence of a stable voltage source.

The FRAM chip used provides 32KB of memory, and USES a clock up to 20 MHz.

Each byte can be read and written instantaneously, but will keep the memory for 95 years at room temperature.

Specifications: 

Addr: 1010+A2+A1+A0 

Default: 0 x 50 

VCC/Logic: 2.7-5.5V